10v drive nch mosfet R6018ANJ ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) high-speed switching. 3) wide soa. 4) drive circuits can be simple. 5) parallel use is easy. ? application switching ? packaging specifications ? inner circuit package taping code tl basic ordering unit (pieces) 1000 R6018ANJ ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 600 v gate-source voltage v gss ? 30 v continuous i d ? 18 a i dp ? 72 a continuous i s 18 a i sp 72 a avalanche current i as 9a avalanche energy e as 21.6 mj power dissipation p d 100 w channel temperature t ch 150 ? c range of storage temperature t stg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 l 500 ? h, v dd =50v, r g =25 ? , t ch =25 ? c *3 limited only by maximum temperature allowed. *4 t c =25 ? c ? thermal resistance symbol limits unit channel to case r th (ch-c) 1.25 ? c / w pulsed parameter type source current (body diode) drain current parameter pulsed (1) gate (2) drain (3) source ? 1 body diode *4 *2 *2 *3 *1 *3 *1 lpts 10.1 4.5 13.1 9.0 3.0 0.78 2.54 5.08 1.24 0.4 1.0 1.2 1.3 2.7 (1) (2) (3) (1) (3) (2) ?1 (1) gate (2) drain (3) source 1/5 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
R6018ANJ ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = ? 30v, v ds =0v drain-source breakdown voltage v (br)dss 600 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss - - 100 ? av ds =600v, v gs =0v gate threshold voltage v gs (th) 2.5 - 4.5 v v ds =10v, i d =1ma forward transfer admittance l y fs l 6.5 - - s v ds =10v, i d =9a input capacitance c iss - 2050 - pf v ds =25v output capacitance c oss - 1400 - pf v gs =0v reverse transfer capacitance c rss - 60 - pf f=1mhz turn-on delay time t d(on) - 37 - ns v dd 300v, i d =9a rise time t r - 85 - ns v gs =10v turn-off delay time t d(off) - 155 - ns r l =33.3 ? fall time t f - 65 - ns r g =10 ? total gate charge q g - 55 - nc v dd 300v gate-source charge q gs - 10 - nc i d =18a gate-drain charge q gd - 22 - nc v gs =10v *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =18a, v gs =0v *pulsed conditions ? parameter static drain-source on-state resistance r ds (on) i d =9a, v gs =10v - 0.21 0.27 parameter conditions * * * * * * * * * * 2/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6018ANJ ? electrical characteristic curves 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 fig.9 source current vs. source - drain voltage v gs = 0v pulsed t a =125 t a = 75 t a = 25 t a = - 25 0.01 0.1 1 10 0.1 1 10 100 v gs = 10v pulsed t a =125 t a = 75 t a = 25 t a = - 25 0 0.1 0.2 0.3 0.4 0.5 0.6 -50 0 50 100 150 v gs = 10v pulsed i d = 9a i d =18a 0 1 2 3 4 5 6 -50 0 50 100 150 v ds = 10v i d = 1ma 0 10 20 30 40 0 10 20 30 40 50 t a = 25 pulsed v gs =5.0v v gs = 4.5v v gs =6.0v v gs =7.0v v gs =8.0v v gs =6.5v v gs =10v v gs =9.0v fig.1: typical output characteristics( ) drain - source voltage: v ds (v) drain current: i d (a) 0 5 10 15 20 0 1 2 3 4 5 t a = 25 pulsed v gs = 4.5v v gs =5.0v v gs =6.0v v gs =5.5v v gs =6.5v v gs =7.0v v gs =8.0v v gs =10v fig.2: typical output characteristics( ) drain - source voltage: v ds (v) drain current: i d (a) 0.001 0.01 0.1 1 10 100 0 1 2 3 4 5 6 7 v ds = 10v pulsed t a =125 t a = 75 t a = 25 t a = - 25 fig.3 typical transfer characteristics gate - source voltage : v gs (v) drain current : i d (a) fig.4 gate threshold voltage vs. channel temperature channel temperature: t ch ( ) gate threshold voltage: v gs(th) (v) fig.5 static drain - source on - state resistance vs. drain current drain current : i d (a) static drain - source on - state resistance : r ds(on) ( ) 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 t a =25 pulsed i d =9a i d =18a fig.6 static drain - source on - state resistance vs. gate source gate - source voltage : v gs (v) static drain - source on - state resistance : r ds(on) ( ) fig.7 static drain - source on - state resistance vs. channel temperature channel temperature: t ch ( ) static drain - source on - state resistance : r ds(on) ( ) 0.01 0.1 1 10 100 0.1 1 10 100 v ds = 10v pulsed t a =125 t a = 75 t a = 25 t a = - 25 fig.8 forward transfer admittance vs. drain current drain current : i d (a) forward transfer admittance : |yfs| (s) source - drain voltage : v sd (v) source current : i s (a) 3/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6018ANJ 10 100 1000 10000 0 1 10 100 fig.12 reverse recovery time vs. source current t a = 25 di/dt= 100a/ s v gs = 0v pulsed 1 10 100 1000 10000 0.1 1 10 100 1000 c iss c oss c rss t a = 25 f= 1mhz v gs = 0v fig.10 typical capacitance vs. drain - source voltage drain - source voltage : v ds (v) capacitance : c (pf) 0 5 10 15 0 10 20 30 40 50 60 70 t a = 25 v dd = 300v i d = 18a r g = 10 pulsed fig.11 dynamic input characteristics total gate charge : q g (nc) gate - source voltage : v gs (v) source current : i s (a) reverse recovery time: t rr (ns) 1 10 100 1000 10000 0.01 0.1 1 10 100 t r t f t d(on) t d(off) ta= 25 v dd = 300v v gs = 10v r g = 10 pulsed fig.13 switching characteristics drain current : i d (a) switching time : t (ns) 4/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6018ANJ ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v ds d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 f ig.2-1 gate charge measurement circuit v gs i g(const.) r g v d s d.u.t. i d r l v dd 5/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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